Selectively grown InxGa1-xAs and InxGa1-xP structures: locally resolved stoichiometry determination by Raman spectroscopy

Jean Geurts; Jo Finders; O. Kayser; Berhard Opitz; M. Maassen; R. Westphalen; P. Balk

doi:10.1117/12.24437

1 March 1991 Selectively grown InxGa1-xAs and InxGa1-xP structures: locally resolved stoichiometry determination by Raman spectroscopy

Jean Geurts, Jo Finders, O. Kayser, Berhard Opitz, M. Maassen, R. Westphalen, P. Balk

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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24437
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

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Jean Geurts, Jo Finders, O. Kayser, Berhard Opitz, M. Maassen, R. Westphalen, and P. Balk "Selectively grown InxGa1-xAs and InxGa1-xP structures: locally resolved stoichiometry determination by Raman spectroscopy", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24437

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