Some new insights in the physics of quantum-well devices

Raphael Tsu

doi:10.1117/12.24369

1 March 1991 Some new insights in the physics of quantum-well devices

Raphael Tsu

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24369
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The optical response of conduction electrons in a superlattice is presented. The time response of electron tunneling through a double barrier is examined with the time dependent Schroedinger''s equation. The energy states of a silicon quantuirt box are calculated with the use of a variational procedure for a spherical box. The regions of applicability of the band-model and the hoppingmodel for negative differential conductivity are discussed. And finally sonie problems involv ing phase rardoraization and inelastic scatterings with the presence of attractive o repulsive elastic scattering centers in a confined re gion are discussed.

Citation Download Citation

Raphael Tsu "Some new insights in the physics of quantum-well devices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24369

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