Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition

Georges E. Bremond; Hicham Said; Gerard Guillot; Jaafar Meddeb; M. Pitaval; Nasser Draidia; Rozette Azoulay

doi:10.1117/12.24436

1 March 1991 Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition

Georges E. Bremond, Hicham Said, Gerard Guillot, Jaafar Meddeb, M. Pitaval, Nasser Draidia, Rozette Azoulay

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24436
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We present a complete characterization study of GaAs/Si heteroepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) at 750C using the two-step method. High resolution transmission electron microscopy secondary ion mass spectroscopy deep level transient spectroscopy (DLTS) and photoluminescence (PL) spectroscopy have been performed to study the initial stage of growth misfit and threading dislocations Si diffusion and the deep levels in the GaAs layer. We describe the influence of GaAs/AlAs superlattices in the buffer layer on the decrease of dislocation density and on Si diffusion from the substrate and the existence of deep electron traps induced by the heteroepitaxy. DLTS reveals hole traps attributed to Si incorporation on the basis of PL measurements which could contribute to the reduction of the minority carrier lifetime. We also show an improvement of the layer quality by the use of selective epitaxy.

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Georges E. Bremond, Hicham Said, Gerard Guillot, Jaafar Meddeb, M. Pitaval, Nasser Draidia, and Rozette Azoulay "Transmission electron microscopy, photoluminescence, and capacitance spectroscopy on GaAs/Si grown by metal organic chemical vapor deposition", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24436

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