Paper
1 February 1991 InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate
Luc Buydens, Piet M. A. Demeester, Peter M. De Dobbelaere, Peter Van Daele
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24532
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
InGaAs/AlGaAs Strained Layer Superlattices (SLS) have been grown using the MOVPE technique. These layers were characterized by X-ray, photoluminescence, photocurrent and transmission measurements. With this material optical modulators and LEDs were made working at a wavelength for which the GaAs substrate is transparent. Reverse biasing the modulator resulted in a large absorption shift in the photocurrent spectra due to the Quantum Confined Stark Effect (QCSE) on the quantum wells. An InGaAs/AlGaAs SLS compared favorably with similar InGaAs/GaAs SLSs. A back-side emitting LED, with an InGaAs SQW as the active layer, gave a maximal output power of about 8 micro-W/mA/Sr.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luc Buydens, Piet M. A. Demeester, Peter M. De Dobbelaere, and Peter Van Daele "InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24532
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Laser sintering

Light emitting diodes

Gallium arsenide

Optoelectronic devices

Indium gallium arsenide

Optical modulators

Quantum wells

RELATED CONTENT


Back to Top