High-power switching with electron-beam-controlled semiconductors

Ralf Peter Brinkmann; Karl H. Schoenbach; Randy A. Roush; David C. Stoudt; Vishnu K. Lakdawala; Glenn A. Gerdin

doi:10.1117/12.25054

1 March 1991 High-power switching with electron-beam-controlled semiconductors

Ralf Peter Brinkmann, Karl H. Schoenbach, Randy A. Roush, David C. Stoudt, Vishnu K. Lakdawala, Glenn A. Gerdin

Proceedings Volume 1378, Optically Activated Switching; (1991) https://doi.org/10.1117/12.25054
Event: Advances in Intelligent Robotics Systems, 1990, Boston, MA, United States

Abstract

Measurements and model calculations on semi-insulating GaAs as material for optically and electron-beam controlled semiconductor switches have shown that the steady state current is a strongly nonlinear function of both the applied voltage and the radiation intensity. The nonlinear shape of these curves can be influenced over a wide range by doping with suitable deep acceptors or donors, a result which opens the possibility of "tailoring" the materials to meet specific demands. As an example, it is discussed how a current-controlled negative differential conductivity due to Cu-doping can be utilized for a fast (sub-nanosecond) e-beam controlled switch which operates at low dark current, high hold-off voltage and a forward resistance which lies considerably below the lock-on resistance.

Citation Download Citation

Ralf Peter Brinkmann, Karl H. Schoenbach, Randy A. Roush, David C. Stoudt, Vishnu K. Lakdawala, and Glenn A. Gerdin "High-power switching with electron-beam-controlled semiconductors", Proc. SPIE 1378, Optically Activated Switching, (1 March 1991); https://doi.org/10.1117/12.25054

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