Si-based epitaxial growth by rapid thermal processing chemical vapor deposition

Kissoo H. Jung; T. Y. Hsieh; Dim-Lee Kwong; D. B. Spratt

doi:10.1117/12.25709

1 April 1991 Si-based epitaxial growth by rapid thermal processing chemical vapor deposition

Kissoo H. Jung, T. Y. Hsieh, Dim-Lee Kwong, D. B. Spratt

Proceedings Volume 1393, Rapid Thermal and Related Processing Techniques; (1991) https://doi.org/10.1117/12.25709
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

Rapid thermal processing chemical vapor deposition (RTPCVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition while still retaining the ability to grow high quality epitaxial layers. We have used RTPCVD to grow epitaxial films of undoped Si in-situ doped Si and Ge1Si1. Both bare Si substrates and Si-on-insulator (SOl) substrates were used. We have also demonstrated selective epitaxial growth (SEG) of Si using oxide masks. Our results show that RTPCVD is capable of growing high quality epitaxial layers with sharp concentration transition profiles. 1.

Citation Download Citation

Kissoo H. Jung, T. Y. Hsieh, Dim-Lee Kwong, and D. B. Spratt "Si-based epitaxial growth by rapid thermal processing chemical vapor deposition", Proc. SPIE 1393, Rapid Thermal and Related Processing Techniques, (1 April 1991); https://doi.org/10.1117/12.25709

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