Analytical model for the potential drop in the silicon substrate on thin-film SOI MOSFETs and its influence on the threshold voltage

Joad A. Martino; L. Lauwers; Jean Pierre Colinge

doi:10.1117/12.26296

1 November 1990 Analytical model for the potential drop in the silicon substrate on thin-film SOI MOSFETs and its influence on the threshold voltage

Joad A. Martino, L. Lauwers, Jean Pierre Colinge

Author Affiliations +

Proceedings Volume 1405, 5th Congress of the Brazilian Society of Microelectronics; (1990) https://doi.org/10.1117/12.26296
Event: 5th Congress of the Brazilian Society of Microelectronics, 1990, Sao Paulo, Brazil

Abstract

A simple analytical model for the potential drop in the silicon substrate on thin film SOI MOSFET''s is developed. The model clearly show the dependence of this potential drop on the process parameters. The analysis is supported by numerical simulation from PISCES. A very good fitting in the depletion region and a reasonable agreement in the accumulation and inversion regions is obtained. The effect of this potential drop in the substrate on the threshold voltage is analyzed and it is shown that when the back oxide thickness decreases, the influence on the threshold voltage increases in the same proportion. It is also shown that if we don''t have a good control of the back-oxide/substrate interface, it will be difficult to know the value of the threshold voltage deviation because of its high sensitivity to changes in interface charge density.

Citation Download Citation

Joad A. Martino, L. Lauwers, and Jean Pierre Colinge "Analytical model for the potential drop in the silicon substrate on thin-film SOI MOSFETs and its influence on the threshold voltage", Proc. SPIE 1405, 5th Congress of the Brazilian Society of Microelectronics, (1 November 1990); https://doi.org/10.1117/12.26296

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