Effect of a longitudinal magnetic field on the diffusion coefficient of the minority carriers in solid state junction lasers

Kamakhya Prasad Ghatak; Bhaswati Mitra; Shambhu Nath Biswas

doi:10.1117/12.43692

1 May 1991 Effect of a longitudinal magnetic field on the diffusion coefficient of the minority carriers in solid state junction lasers

Kamakhya Prasad Ghatak, Bhaswati Mitra, Shambhu Nath Biswas

Author Affiliations +

Proceedings Volume 1415, Modeling and Simulation of Laser Systems II; (1991) https://doi.org/10.1117/12.43692
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States

Abstract

This paper discusses the diffusion coefficient of minority carriers in solid state junction lasers in the presence of a longitudinal quantizing magnetic field, i.e., III-V, II-VI and IV-VI lasers. An expression of the normalized diffusion coefficient of the minority carriers under magnetic quantization, spin, and broadening of Landau levels respectively, have been formulated without approximations of band parameters. The authors used three-band Kane model and the four-band Kane model for III-V lasers, Hopfield model for II-VI lasers, and the model of Genzow et al. for IV-VI lasers respectively. It was found, taking InSb, CdS, and PbTe junction lasers as examples of III-V, II-VI, and IV-VI lasers respectively, that the diffusion coefficient oscillates with inverse magnetic field for aforementioned lasers due to SdH effect. The diffusion coefficient continuously decreases at low temperatures with increasing values of the longitudinal magnetic field in the quantum limit. Unlike the decrease of the diffusion coefficient in a transverse magnetic field due to deflections of the minority carriers, the decrease in the longitudinal magnetic field results from the lowering of the electron quasi-Fermi level with respect to the bottom of the conduction band. The numerical magnitudes of the normalized diffusion constants are greatest for the II-VI lasers and the least for the III-V lasers. The theoretical results with experimental observations reported elsewhere. In addition, the results of wide band gap junction laser materials have been obtained as special cases of generalized formulations under certain limiting conditions.

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Kamakhya Prasad Ghatak, Bhaswati Mitra, and Shambhu Nath Biswas "Effect of a longitudinal magnetic field on the diffusion coefficient of the minority carriers in solid state junction lasers", Proc. SPIE 1415, Modeling and Simulation of Laser Systems II, (1 May 1991); https://doi.org/10.1117/12.43692

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KEYWORDS

Magnetism

Diffusion

Laser systems engineering

Semiconductor lasers

Modeling and simulation

Systems modeling

Semiconductors

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