Ultralinear low-noise amplifier technology for space communications

E. T. Watkins; Kevin Yu; Wai-Fan Yau; Chan-Shin Wu; Steve Yuan

doi:10.1117/12.44481

1 July 1991 Ultralinear low-noise amplifier technology for space communications

E. T. Watkins, Kevin Yu, Wai-Fan Yau, Chan-Shin Wu, Steve Yuan

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44481
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

Methods aimed at increasing linearity of a low noise amplifier with specified 1-dB compression point using the spike doped MESFETs are described. Particular attention is given to the effects of FET device parameters on the third order intermodulation (IM3), an MBE spike doped MESFET, spike doped MESFET characteristics, and a three-stage MMIC amplifier. It is concluded that the IM3 can be significantly reduced by choosing the appropriate device and operating the amplifier with optimized device parameters.

Citation Download Citation

E. T. Watkins, Kevin Yu, Wai-Fan Yau, Chan-Shin Wu, and Steve Yuan "Ultralinear low-noise amplifier technology for space communications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44481

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