Paper
1 August 1991 Characterization of anodic fluoride films on Hg1-xCdxTe
Ignacio Esquivias, M. Dal Colle, D. Brink, Jan W. Baars, Martin Bruder
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Abstract
Experimental results concerning the properties of anodic fluoride films grown on HgCdTe (O.2 xO.3) are presented and discussed. The analysis of the growth rate and XPS measurements indicate that the films are composed of a mixture of Cd, Hg and Te fluorides, together with unreacted HgTe and elemental Te. The films are characterized by some of their optical, electrical and chemical properties. Capacitance—voltage measurements of MIS devices are employed to determine the electronic properties of the anodic fluoridelllgCdTe interface. The results show that a positive and unstable charge density is present at the interface.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ignacio Esquivias, M. Dal Colle, D. Brink, Jan W. Baars, and Martin Bruder "Characterization of anodic fluoride films on Hg1-xCdxTe", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46507
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Cited by 2 scholarly publications.
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KEYWORDS
Tellurium

Fluorine

Mercury cadmium telluride

Interfaces

Cadmium

Etching

Mercury

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