Photoemission from quantum-confined structure of nonlinear optical materials

Kamakhya Prasad Ghatak; Shambhu Nath Biswas

doi:10.1117/12.46513

1 August 1991 Photoemission from quantum-confined structure of nonlinear optical materials

Kamakhya Prasad Ghatak, Shambhu Nath Biswas

Proceedings Volume 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches; (1991) https://doi.org/10.1117/12.46513
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

The photoemission from quantum wells, quantum wires, and quantum dots of nonlinear optical materials is studied, taking n-CdGeAs₂ as an example. The authors have formulated the photoemission from the aforementioned materials by deducing the new carrier energy spectra in all cases, taking into account various types of anisotropies of the energy band parameters. It is found that the photoemission increases with incident photon energy in a ladder-like manner and also exhibits oscillatory dependences with changing film thickness and the carrier density, respectively, for all cases. The numerical values of the photoemission is greatest in quantum dots and least in quantum wells. The well-known results have been shown as special cases under certain limiting conditions of our generalized expressions. The theoretical formulations are in agreement with the experimental observations as reported elsewhere.

Citation Download Citation

Kamakhya Prasad Ghatak and Shambhu Nath Biswas "Photoemission from quantum-confined structure of nonlinear optical materials", Proc. SPIE 1484, Growth and Characterization of Materials for Infrared Detectors and Nonlinear Optical Switches, (1 August 1991); https://doi.org/10.1117/12.46513

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