Attenuation of leaky waves in GaAs/AlGaAs MQW waveguides formed on a GaAs substrate

Jacek Marek Kubica

doi:10.1117/12.45967

1 August 1991 Attenuation of leaky waves in GaAs/AlGaAs MQW waveguides formed on a GaAs substrate

Jacek Marek Kubica

Proceedings Volume 1506, Micro-Optics II; (1991) https://doi.org/10.1117/12.45967
Event: ECO4 (The Hague '91), 1991, The Hague, Netherlands

Abstract

The transfer matrix method is employed to analyze the propagation of leaky waves within planar multiple quantum well (MQW) waveguides implemented in the GaAs/AlGaAs material system and formed on GaAs substrates. The analysis provides an accurate picture of attenuation of both TE and TM polarized waves at the operational wavelength of 1.15 micrometers . Particular attention has been drawn to the variation of the loss coefficient as a function of parameters of the AlGaAs buffer layer separating the MQW core and the high index GaAs substrate.

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Jacek Marek Kubica "Attenuation of leaky waves in GaAs/AlGaAs MQW waveguides formed on a GaAs substrate", Proc. SPIE 1506, Micro-Optics II, (1 August 1991); https://doi.org/10.1117/12.45967

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