Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition

Yi Ping Feng; Bing Yao Jiang; Gen Qing Yang; Wei-Shi Huang; Zhi Hong Zheng; Xiang Huai Liu; Shichang Zou

doi:10.1117/12.47242

1 November 1991 Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition

Yi Ping Feng, Bing Yao Jiang, Gen Qing Yang, Wei-Shi Huang, Zhi Hong Zheng, Xiang Huai Liu, Shichang Zou

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47242
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Bilayer thin films of boron nitride and silicon nitride were prepared by sequential electron beam evaporation of Si or B and simultaneous irradiation with nitrogen ions. The composition and structure of the films were investigated by AES and IR analysis.

Citation Download Citation

Yi Ping Feng, Bing Yao Jiang, Gen Qing Yang, Wei-Shi Huang, Zhi Hong Zheng, Xiang Huai Liu, and Shichang Zou "Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47242

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