Preparation of tin oxide and insulating oxide thin films for multilayered gas sensors

Chang Dong Feng; Yasuhiro Shimizu; Makoto Egashira

doi:10.1117/12.47298

1 November 1991 Preparation of tin oxide and insulating oxide thin films for multilayered gas sensors

Chang Dong Feng, Yasuhiro Shimizu, Makoto Egashira

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47298
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Crack-free SnO₂ and SiO₂ films with the controlled thickness up to 1 micrometers have been prepared by the sol-gel spin coating method. Preparation conditions and microstructure of the films are described. Gas sensing elements consisting of single SnO₂ thin film and multi-layered SiO₂/SnO₂ thin films have been prepared using this method. Comparison of sensing properties between single SnO₂ thin film and multi-layered thin film sensing elements shows potential advantage for developing selective gas sensors.

Citation Download Citation

Chang Dong Feng, Yasuhiro Shimizu, and Makoto Egashira "Preparation of tin oxide and insulating oxide thin films for multilayered gas sensors", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47298

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