Paper
1 February 1992 Energy Loss Function for a GaAs/A1x Ga1-x As Superlattice
A. C. Sharma
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634084
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
We present a model calculation o-f energy loss function for intralayer as well as interlayer interaction in modulation doped GaAs/AlGaiAs superlattice which consists of two GaAs layer at a distance d1 apart in a unit cell of length d. The intralayer interaction yields one acoustic and one optic plasmon modes while interlayer interaction gives only one. optic plasmon mode. The acoustic plasmon mode ceases to exist for very small values of wave vector and very large values of damping constant.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. C. Sharma "Energy Loss Function for a GaAs/A1x Ga1-x As Superlattice", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.634084
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KEYWORDS
Plasmons

Acoustics

Gallium arsenide

Superlattices

Electrons

Gallium

Modulation

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