Current status of InGaAs detector arrays for 1-3 um

Gregory H. Olsen; Abhay M. Joshi; Vladimir S. Ban

doi:10.1117/12.48765

1 December 1991 Current status of InGaAs detector arrays for 1-3 μm

Gregory H. Olsen, Abhay M. Joshi, Vladimir S. Ban

Proceedings Volume 1540, Infrared Technology XVII; (1991) https://doi.org/10.1117/12.48765
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

In(x)Ga(1-x)As detector linear arrays with 256 and 512 elements have been made for the 1.0-1.7 micron spectrum (x = 0.53) and 1.4-2.6 microns (x = 0.8) with 30 x 30, 30 x 100, and 25 x 500 micron pixel sizes. Room temperature D* values beyond 1 x 10 exp 13 W/cm-sq rt Hz (at 1.7 micron) and 1 x 10 exp 11 W/cm-sq rt Hz (at 2.5 microns) are reported. A 128 x 128 element In(0.53)Ga(0.47)As detector array with less than 1 percent dropouts is also described. High reliability is also reported for these arrays. Future improvements needed include lower-noise multiplexers and the use of zero-bias multiplexers.

Citation Download Citation

Gregory H. Olsen, Abhay M. Joshi, and Vladimir S. Ban "Current status of InGaAs detector arrays for 1-3 μm", Proc. SPIE 1540, Infrared Technology XVII, (1 December 1991); https://doi.org/10.1117/12.48765

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