Zn3P2: new material for optoelectronic devices

Jan Misiewicz; Jan Szatkowski; Nella Mirowska; Zbigniew Gumienny; Ewa Placzek-Popko

doi:10.1117/12.50749

1 December 1991 Zn₃P₂: new material for optoelectronic devices

Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, Ewa Placzek-Popko

Proceedings Volume 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion; (1991) https://doi.org/10.1117/12.50749
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

Fundamental optical and electronic parameters of Zn₃P₂ are presented. Mg-Zn₃P₂ structures are examined as a solar energy converter and broad-range photodetector. A distinct photodichroism, observed for junctions prepared on oriented single crystal, is applied in light polarization step indicator.

Citation Download Citation

Jan Misiewicz, Jan Szatkowski, Nella Mirowska, Zbigniew Gumienny, and Ewa Placzek-Popko "Zn₃P₂: new material for optoelectronic devices", Proc. SPIE 1561, Inorganic Crystals for Optics, Electro-Optics, and Frequency Conversion, (1 December 1991); https://doi.org/10.1117/12.50749

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