Paper
1 December 1991 Automated visual inspection for LSI wafer patterns using a derivative-polarity comparison algorithm
Shunji Maeda, Takashi Hiroi, Hiroshi Makihira, Hitoshi Kubota
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Abstract
Algorithms for visual inspection of LSI wafer multilayer patterns have been developed. These algorithms compare corresponding images of two dies on a wafer. In this paper, two algorithms are proposed. The derivative-polarity comparison algorithm compares the polarities of the first derivatives of two images, and recognizes the regions whose polarities are not matched as positional discrepancies (defects), in order to cope with gray-scale differences caused by pattern thickness errors. The multiple-displacement pattern matching algorithm executes the above polarity comparisons at several positions with images suitably aligned, and determines the common unmatched regions as defective, in order to handle the interlayer- registration errors encountered with multilayer patterns. These algorithms were evaluated experimentally, and it was verified that defects of 0.3 micrometers or more can be reliably detected in multilayer patterns by combining these algorithms.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shunji Maeda, Takashi Hiroi, Hiroshi Makihira, and Hitoshi Kubota "Automated visual inspection for LSI wafer patterns using a derivative-polarity comparison algorithm", Proc. SPIE 1567, Applications of Digital Image Processing XIV, (1 December 1991); https://doi.org/10.1117/12.50808
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Cited by 6 scholarly publications.
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KEYWORDS
Algorithm development

Detection and tracking algorithms

Semiconducting wafers

Inspection

Signal detection

Defect detection

Digital image processing

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