Optically controlled characteristics of HEMT

B. B. Pal; H. Mitra; Dharmendra P. Singh; S. N. Chattopadhyay

doi:10.1117/12.636865

16 December 1992 Optically controlled characteristics of HEMT

B. B. Pal, H. Mitra, Dharmendra P. Singh, S. N. Chattopadhyay

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.636865
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

The effect of optical radiation on the electrical characteristics of a HENT device has been carried out. Both photovoltaic effect in the metalsemiconductor junction and photogeneration of carriers in the space charge layer of n-A1GaAs HENT device have been taken into account. Offset voltage is found to decrease with flux density and active layer concentration. The drain current is observed to increase with the increase in radiation flux density photogeneration of electronhole pairs. The photovoltaic effect develops a forward voltage across the metalsemiconductor junction. In a A1GaAs/GaAs system the electrons and holes generated in nAlGaAs layer are separated out from each other by the field across the'' metalsemiconductor junction and heterointerface. Thus due to the additional charge carriers the charge density in 2DEG at the heterointerface of the HENT structure will be modified. The theory is given in the next section. Theory The optical HENT structure is shown in Fig. 1 . The region between the Schottky gate and the heterojunction interface is assumed to be totally depleted and the electrostatic potential v2 at the end of the semiconductor (x d2) is obtained by solving Poisson''s eqn. 2 - '' [N2(x) + n(x)(1) dx2 alongwith appropriate boundary condition N2(x) and 2 are the doping concentration and permittivity of n-A1GaAs layer. n(x) is the Photonic devices find a lot of applications in optical communication integrated optics and optical computer. High speed devices

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B. B. Pal, H. Mitra, Dharmendra P. Singh, and S. N. Chattopadhyay "Optically controlled characteristics of HEMT", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.636865

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