Paper
12 May 1992 Nondestructive evaluation of junction effects in GaAs avalanche photoconductors
Michael H. Herman, Kenneth M. Positeri, S. M. Ahern, Robert A. Lewis
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Proceedings Volume 1632, Optically Activated Switching II; (1992) https://doi.org/10.1117/12.59069
Event: OE/LASE '92, 1992, Los Angeles, CA, United States
Abstract
We have studied the current-voltage-temperature response of off-state NIN GaAs Avalanche Photoconductors. These non-destructive tests, evaluated in terms of thermal activation energies (Ea), and Resistance-Voltage (R-V) characteristics, are found to effectively distinguish between two types of devices. The first type possesses Ea < Egap/2 and resistivity commensurate with bulk SI GaAs; the second demonstrates Ea > Egap/s and R values greatly surpassing those of bulk Semi-Insulating GaAs. These data are consistent with junction effects at both contact-bulk interfaces, arising from the formation of an uncompensated P-type region near the N+ contact layer. We explain the P-type behavior by trapped electron neutralization of the deep compensating donor EL2.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael H. Herman, Kenneth M. Positeri, S. M. Ahern, and Robert A. Lewis "Nondestructive evaluation of junction effects in GaAs avalanche photoconductors", Proc. SPIE 1632, Optically Activated Switching II, (12 May 1992); https://doi.org/10.1117/12.59069
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KEYWORDS
Gallium arsenide

Resistance

Interfaces

Nondestructive evaluation

Switching

Sodium

Data modeling

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