Paper
26 June 1992 Distributed-feedback vertical-cavity surface-emitting laser with resonant-periodic-gain active region
A. Mohammed Mahbobzadeh, Emmanuelle Gandjbakhch, Eric A. Armour, Kang Zheng, Shang Zhu Sun, Christian F. Schaus, Marek Osinski
Author Affiliations +
Abstract
Fabrication and lasing characteristics of prototype MOCVD-grown GaAs/AlGaAs/AlAs distributed-feedback resonant-periodic-gain surface-emitting lasers are reported. The new structure eliminates the need for end reflectors in earlier resonant-periodic-gain lasers, thereby reducing considerably the total thickness of the device. A new hybrid distributed-Bragg-reflector/distributed-feedback resonant-periodic-gain structure, compatible with the transverse-junction electrical pumping scheme, is also proposed.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Mohammed Mahbobzadeh, Emmanuelle Gandjbakhch, Eric A. Armour, Kang Zheng, Shang Zhu Sun, Christian F. Schaus, and Marek Osinski "Distributed-feedback vertical-cavity surface-emitting laser with resonant-periodic-gain active region", Proc. SPIE 1634, Laser Diode Technology and Applications IV, (26 June 1992); https://doi.org/10.1117/12.59160
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Cited by 2 scholarly publications.
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KEYWORDS
Vertical cavity surface emitting lasers

Reflectors

Calibration

Quantum wells

Semiconducting wafers

Gallium arsenide

Semiconductor lasers

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