High-power master-oscillator power amplifier AlGaAs laser for intersatellite communications

Donald M. Cornwell Jr.

doi:10.1117/12.59275

9 June 1992 High-power master-oscillator power amplifier AlGaAs laser for intersatellite communications

Donald M. Cornwell Jr.

Proceedings Volume 1635, Free-Space Laser Communication Technologies IV; (1992) https://doi.org/10.1117/12.59275
Event: OE/LASE '92, 1992, Los Angeles, CA, United States

Abstract

A master oscillator power amplifier (MOPA) configuration has been developed using an anti-reflection-coated AlGaAs semiconductor broad area laser in a reflective amplifier mode. For CW injection, the MOPA produced 340 mW of diffraction-limited power. The semiconductor MOPA configuration also produced peak diffraction-limited powers of 360 mW and 320 mW for quaternary pulse position Q-PPM modulation rates of 50 Mbps and 325 Mbps, respectively, for a peak injected power of 100 mW. Angular beamsteering during modulation was minimized by collimating the injected beam. The diffraction-limited peak power was limited by the frequency chirp of the master oscillator and also by the coupling losses of the injected beam.

Citation Download Citation

Donald M. Cornwell Jr. "High-power master-oscillator power amplifier AlGaAs laser for intersatellite communications", Proc. SPIE 1635, Free-Space Laser Communication Technologies IV, (9 June 1992); https://doi.org/10.1117/12.59275

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