Paper
1 June 1992 Film thickness measurement of ultrathin film using UV wavelength light
Nobuyuki Kondo, Nariaki Fujiwara, Atsushi Abe
Author Affiliations +
Abstract
In semiconductor production lines, film-thickness is typically measured utilizing ellipsometry or the microspectroscopic measurement. The microspectroscopic measurement is fast, highly accurate and easy to carry out. However, when the film thickness is less than tens of nanometer this method cannot provide adequate measurements. We changed the wavelength used for measurement from the visible light range to the ultraviolet (UV) range and were able to achieve ultrathin-film measurement. At the same time, we found other useful applications of this research: SiO2-film measurement on the polysilicon layer, evaluation of the degree of crystallization of Si film, and others. For highly accurate measurements of ultrathin film, it is vital that the focus and angle be precisely adjusted. In this paper, we report a UV film- thickness measurement system with an automatic adjustment mechanism for the focus and sample surface angle, and also present examples of estimates using this system.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobuyuki Kondo, Nariaki Fujiwara, and Atsushi Abe "Film thickness measurement of ultrathin film using UV wavelength light", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59825
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Cited by 1 scholarly publication.
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KEYWORDS
Ultraviolet radiation

Reflectivity

Silicon

Thin films

Sensors

Crystals

Objectives

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