Paper
1 June 1992 Plasma deposition of high-quality silicon dioxide
Tie-Han Wang
Author Affiliations +
Abstract
This paper presents a new deposition system in PECVD. The reaction principle is described and the experimental results show the properties of deposition film are nearly those produced by thermal-grown SiO2. We had success using a passivation layer and diffusion barrier in the semiconductor device manufacturing process.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tie-Han Wang "Plasma deposition of high-quality silicon dioxide", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59822
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KEYWORDS
Plasma enhanced chemical vapor deposition

Refractive index

Plasma

Silica

Inspection

Integrated circuits

Silicon

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