Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy

Klaus H. Ploog; Richard Noetzel

doi:10.1117/12.137645

2 September 1992 Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy

Klaus H. Ploog, Richard Noetzel

Proceedings Volume 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication; (1992) https://doi.org/10.1117/12.137645
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The evolution of ordered surface and interface structures on (111), (211), and (311) GaAs during molecular beam epitaxy offers the unique possibility to directly synthesize GaAs quantum wires and quantum dots in an AlAs matrix. We show that well ordered alternating thicker and thinner regions of GaAs and AlAs form symmetric and asymmetric quantum-dot structures on (111) and (211) substrates, respectively, and quantum-wire structures on (311) substrates. The observed optical properties confirm the lateral size quantization in these GaAs/AlAs multilayer structures.

Citation Download Citation

Klaus H. Ploog and Richard Noetzel "Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy", Proc. SPIE 1676, Advanced Semiconductor Epitaxial Growth Processes and Lateral and Vertical Fabrication, (2 September 1992); https://doi.org/10.1117/12.137645

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