Polarization effects in hot-electron luminescence from GaAs

Wolfgang K. P. Hackenberg; H. P. Hughes; Gerhard Fasol; Hiroyuki Kano

doi:10.1117/12.137690

21 October 1992 Polarization effects in hot-electron luminescence from GaAs

Wolfgang K. P. Hackenberg, H. P. Hughes, Gerhard Fasol, Hiroyuki Kano

Proceedings Volume 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors; (1992) https://doi.org/10.1117/12.137690
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Hot electron luminescence spectroscopy of GaAs shows polarization dependent lineshape variations of 0.5 approximately 1.0 meV. It is shown how a lineshape model which includes a k.p calculation of the band structure, optical transition matrix elements in the dipole model, and lifetime broadening, is able to explain these polarization effects. For linearly polarized excitation, the observation arises from the optical alignment of the hot electron momenta, while for circularly polarized excitation the effect is caused by transitions between specific electronic spin states identifiable by a selection rule.

Citation Download Citation

Wolfgang K. P. Hackenberg, H. P. Hughes, Gerhard Fasol, and Hiroyuki Kano "Polarization effects in hot-electron luminescence from GaAs", Proc. SPIE 1677, Ultrafast Lasers Probe Phenomena in Semiconductors and Superconductors, (21 October 1992); https://doi.org/10.1117/12.137690

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