Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K

Thomas J. Cunningham; Eric R. Fossum; Steven M. Baier

doi:10.1117/12.60498

1 July 1992 Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K

Thomas J. Cunningham, Eric R. Fossum, Steven M. Baier

Author Affiliations +

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60498
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 5K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

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Thomas J. Cunningham, Eric R. Fossum, and Steven M. Baier "Noise and current-voltage characterization of complementary heterojunction field-effect transistor structures below 8 K", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60498

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