640 x 480 PtSi MOS infrared imager

Donald J. Sauer; Frank V. Shallcross; Fu-Lung Hseuh; Grazyna M. Meray; Peter A. Levine; Harvey R. Gilmartin; Thomas S. Villani; Benjamin J. Esposito; John R. Tower

doi:10.1117/12.137819

1 September 1992 640 x 480 PtSi MOS infrared imager

Donald J. Sauer, Frank V. Shallcross, Fu-Lung Hseuh, Grazyna M. Meray, Peter A. Levine, Harvey R. Gilmartin, Thomas S. Villani, Benjamin J. Esposito, John R. Tower

Author Affiliations +

Proceedings Volume 1685, Infrared Detectors and Focal Plane Arrays II; (1992) https://doi.org/10.1117/12.137819
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

The design and performance of a 640 (H) X 480 (V) element PtSi Schottky-barrier infrared image sensor employing a low-noise MOS X-Y addressable readout multiplexer and on-chip low-noise output amplifier is described. The imager achieves an NEDT equals 0.10 K at 30 Hz frame rates with f/1.5 optics (300 K background). The MOS design provides a measured saturation level of 1.5 X 10⁶ electrons (5 V bias) and a noise floor of 300 rms electrons per pixel. A multiplexed horizontal/vertical input address port and on-chip decoding is used to load scan data into CMOS horizontal and vertical scanning registers. This allows random access to any sub-frame in the 640 X 480 element focal plane array. By changing the digital pattern applied to the vertical scan register, the FPA can be operated in either an interlaced or non-interlaced format, and the integration time may be varied over a wide range (60 microsecond(s) to > 30 ms, for RS 170 operation) resulting in `electronic shutter' variable exposure control. The pixel size of 24 micrometers X 24 micrometers results in a fill factor of 38% for 1.5 micrometers process design rules. The overall die size for the IR imager is 13.7 mm X 17.2 mm. All digital inputs to the chip are TTL compatible and include ESD protection.

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Donald J. Sauer, Frank V. Shallcross, Fu-Lung Hseuh, Grazyna M. Meray, Peter A. Levine, Harvey R. Gilmartin, Thomas S. Villani, Benjamin J. Esposito, and John R. Tower "640 x 480 PtSi MOS infrared imager", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137819

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KEYWORDS

Imaging systems

Molybdenum

Sensors

Electrons

Staring arrays

Multiplexers

Transistors

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