Dependence of Fermi level of Hg0.8Cd0.2Te on impurity concentration and temperature

Fei-Fei Wu; Wenzhen Song; De-chun Li; Jingxuan Yan; Jiaxiong Fang; Guosen Xu

doi:10.1117/12.137805

1 September 1992 Dependence of Fermi level of Hg_0.8Cd_0.2Te on impurity concentration and temperature

Fei-Fei Wu, Wenzhen Song, De-chun Li, Jingxuan Yan, Jiaxiong Fang, Guosen Xu

Proceedings Volume 1685, Infrared Detectors and Focal Plane Arrays II; (1992) https://doi.org/10.1117/12.137805
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

The relationship between the Fermi level of MCT and the impurity concentration and temperature was calculated with considering the special characteristics of nonparabolic bands of MCT material. And then an imitative formula which coincide very well with the values of log log plot of NDA versus T(m/m0) the curves for constant reduced Fermi level are partially straight lines only have been obtained. Key words: Fermi level, nonparabolic band, Burstein—Moss effect

Citation Download Citation

Fei-Fei Wu, Wenzhen Song, De-chun Li, Jingxuan Yan, Jiaxiong Fang, and Guosen Xu "Dependence of Fermi level of Hg_0.8Cd_0.2Te on impurity concentration and temperature", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137805

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