Paper
1 September 1992 Novel grating-coupled step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum well infrared photodetector
Larry S. Yu, Yanhua H. Wang, Sheng S. Li, Pin Ho
Author Affiliations +
Abstract
A metal grating coupled step-bound-to-miniband (SBTM) transition multiquantum well long wavelength infrared photodetector (LWIP) using a lightly strained In0.07Ga0.93As quantum well with a short-period Al0.4Ga0.6As -GaAs superlattice barrier structure has been developed. The new structure created a potential `step' in the superlattice barrier to block the undesirable electron tunneling current from the heavily doped ground state in the quantum well, which results in a significant reduction in the device dark current. The measured absorbance spectra and photocurrent are in good agreement with our theoretical predictions. The responsivity R(lambda ) at Vb equals 6 V and T equals 77 K was found equal to 0.2, 0.15 A/W for the backside, and front normal incident illumination, respectively.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Larry S. Yu, Yanhua H. Wang, Sheng S. Li, and Pin Ho "Novel grating-coupled step-bound-to-miniband transition InGaAs/GaAs/AlGaAs multiquantum well infrared photodetector", Proc. SPIE 1685, Infrared Detectors and Focal Plane Arrays II, (1 September 1992); https://doi.org/10.1117/12.137800
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KEYWORDS
Quantum wells

Superlattices

Metals

Infrared radiation

Gallium arsenide

Infrared detectors

Quantum well infrared photodetectors

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