High-responsivity UV photoconductors based on GaN epilayers

Larry F. Reitz

doi:10.1117/12.140863

22 January 1993 High responsivity UV photoconductors based on GaN epilayers

Larry F. Reitz

Proceedings Volume 1764, Ultraviolet Technology IV; (1993) https://doi.org/10.1117/12.140863
Event: San Diego '92, 1992, San Diego, CA, United States

Abstract

This paper will describe a new UV sensitive photoconductive detector based on gallium nitride (GaN) material. Data will be presented on devices fabricated over the past several months. These devices have a high responsivity between 200 to 360 nm with a sharp long wavelength cutoff at 360 nm. The detectors have measured gains in excess of six thousand and frequency responses of greater than 100 Hz. The devices have measured dynamic ranges of over four orders of magnitude and operate with bias voltages of 5 to 10 volts. Device designs will be shown that can be utilized in the development of a large monolithic focal plane for UV imaging.

Citation Download Citation

Larry F. Reitz "High responsivity UV photoconductors based on GaN epilayers", Proc. SPIE 1764, Ultraviolet Technology IV, (22 January 1993); https://doi.org/10.1117/12.140863

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