Profiles and chemistry effects in polysilicon and tungsten silicide EPROM 'stack' etching

Daniel L. Flamm; Reza M. Sadjadi; Jeff R. Perry

doi:10.1117/12.142922

16 April 1993 Profiles and chemistry effects in polysilicon and tungsten silicide EPROM "stack" etching

Daniel L. Flamm, Reza M. Sadjadi, Jeff R. Perry

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142922
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

Specialized EPROM cell architectures lead to a host of new difficulties during pattern transfer. Results from patterning stacked gate structure multilayers of WSi_x, polysilicon, SiO₂ and Si₃N₄ with etching chemistries containing HBr and Cl₂ are examined. Strong effects arising from changes in feed composition and wafer temperature are discussed along with some basic mechanisms involved in these interactions.

Citation Download Citation

Daniel L. Flamm, Reza M. Sadjadi, and Jeff R. Perry "Profiles and chemistry effects in polysilicon and tungsten silicide EPROM "stack" etching", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142922

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