Effect of temperature on I-V characteristic of a-Si:H photodiode

Kuan-Lun Chang; Ching-Fa Yeh

doi:10.1117/12.131271

26 October 1992 Effect of temperature on I-V characteristic of a-Si:H photodiode

Kuan-Lun Chang, Ching-Fa Yeh

Author Affiliations +

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131271
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

A promising contact-type linear image sensor, 16 bit/mm high resolution Schottky a-Si:H photodiodes have been fabricated, and its temperature effect on I-V characteristics has been clarified. To achieve excellent small darkcurrent and improve Ip/Id ratio, the a-Si:H photodiodes with the passivation layer being annealed at 200 degree(s)C in air for 30 min is found essentially necessary. In the reverse bias mode, the darkcurrent increases with temperature and doubles for every 8.89 degree(s)C rise, while the photocurrent exhibits little affect below 100 degree(s)C.

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Kuan-Lun Chang and Ching-Fa Yeh "Effect of temperature on I-V characteristic of a-Si:H photodiode", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131271

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