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Using in situ stress measurement combined with infrared spectra and high frequency capacitance-voltage measurement, water effects on the properties of sio2/PSG/sio2 passivation of InSb have been investigated during the passivation film exposure to air after high vacuum annealing. Water absorption in the film gives rise to a compressive stress, causes the flat-band of the film's capacitance-voltage curve to shift toward positive and assists ions to diffuse into the film. These show that water absorption in the porous structure of the passivating film can be the cause of the instability of the film's properties.
Yongqiang Pan
"Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131273
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Yongqiang Pan, "Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb," Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131273