Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

Theresa Sze; A. Mohammed Mahbobzadeh; Julian Cheng; Stephen D. Hersee; Marek Osinski; Steven R. J. Brueck; Kevin J. Malloy

doi:10.1117/12.146897

16 June 1993 Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources

Theresa Sze, A. Mohammed Mahbobzadeh, Julian Cheng, Stephen D. Hersee, Marek Osinski, Steven R. J. Brueck, Kevin J. Malloy

Author Affiliations +

Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146897
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

We compare vertical-cavity surface emitting lasers grown by molecular beam epitaxial methods to those grown by metal organic chemical vapor deposition methods as sources for wavelength-division multiplexing systems.

Citation Download Citation

Theresa Sze, A. Mohammed Mahbobzadeh, Julian Cheng, Stephen D. Hersee, Marek Osinski, Steven R. J. Brueck, and Kevin J. Malloy "Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146897

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