Ion-implanted GaAs

Nicolas C. Anderson

doi:10.1117/12.146536

9 June 1993 Ion-implanted GaAs

Nicolas C. Anderson

Proceedings Volume 1873, Optically Activated Switching III; (1993) https://doi.org/10.1117/12.146536
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

This paper presents initial experimentation conducted on optically activated Gallium Arsenide (GaAs) switches when operated at high electric fields. A Nd:YAG laser operating at 1.06 micrometers has been used to initiate conduction in three sizes of planar GaAs switches. The optical energy required for initiation and delays observed prior to collapse into the sustained current mode are discussed. In addition, dark dc and pulsed experimental characterization studies of ion implanted GaAs switches are presented. The switches were implanted up to approximately 10¹⁸ carriers/cm³ under the cathode contact region.

Citation Download Citation

Nicolas C. Anderson "Ion-implanted GaAs", Proc. SPIE 1873, Optically Activated Switching III, (9 June 1993); https://doi.org/10.1117/12.146536

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