Characterization of atomic force microscopy and electrical probing techniques for IC metrology

Ricardo Toledo-Crow; Mehdi Vaez-Iravani; Bruce W. Smith; Joseph R. Summa

doi:10.1117/12.148946

4 August 1993 Characterization of atomic force microscopy and electrical probing techniques for IC metrology

Ricardo Toledo-Crow, Mehdi Vaez-Iravani, Bruce W. Smith, Joseph R. Summa

Proceedings Volume 1926, Integrated Circuit Metrology, Inspection, and Process Control VII; (1993) https://doi.org/10.1117/12.148946
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

A novel atomic force microscope (AFM) is used to image a microlithographic sample. The AFM operates in the non destructive non-contact mode, uses glass tips as opposed to tungsten or silicon, and has an optical interferometric detection system. Its estimated lateral resolution is under 10 nanometers and much better in the z direction. A sample consisting of chrome features on quartz was produced for measurements using AFM and electric probe techniques. The features are single and grouped lines on the order of 1 micrometers incorporated into an electric probe pad layout. Dimensions of these features are determined from the AFM images by relating their sizes in pixels to the excursions of the scanners during the formation of the images. These results are compared with measurements obtained through electric probing techniques.

Citation Download Citation

Ricardo Toledo-Crow, Mehdi Vaez-Iravani, Bruce W. Smith, and Joseph R. Summa "Characterization of atomic force microscopy and electrical probing techniques for IC metrology", Proc. SPIE 1926, Integrated Circuit Metrology, Inspection, and Process Control VII, (4 August 1993); https://doi.org/10.1117/12.148946

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