Dielectronic recombination of Li-like Si ion

Huaguo Teng; Zhizhan Xu; Baifei Sheng; Wengqi Zhang

doi:10.1117/12.155774

10 September 1993 Dielectronic recombination of Li-like Si ion

Huaguo Teng, Zhizhan Xu, Baifei Sheng, Wengqi Zhang

Author Affiliations +

Proceedings Volume 1928, International Symposium on Laser-Plasma Interactions; (1993) https://doi.org/10.1117/12.155774
Event: Laser-Plasma Interactions: the International Symposium, 1992, Shanghai, China

Abstract

The detailed level to level partial dielectronic recombination rate coefficients of Li-like Si ion through 2 pnl manfolds are calculated. These rate coefficients are presented by the average wavelength (lambda) and average absorption oscillator strengths f defined by P. L. Hagelstein. All calculations are made on the basis of Cowan's program (HFR).

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Huaguo Teng, Zhizhan Xu, Baifei Sheng, and Wengqi Zhang "Dielectronic recombination of Li-like Si ion", Proc. SPIE 1928, International Symposium on Laser-Plasma Interactions, (10 September 1993); https://doi.org/10.1117/12.155774

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