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We manufacture Ni-NiO-Ni diodes with minimum contact areas of 240 • 240 nm2 mounted on 380 1.1m Si wafers and attached to thin-film dipole antennas of 240 nm width and 1.6-22 jim length. They are tested e.g. with polarized 10 pm CO2-laser radi- ation. Their efficiency is improved by replacing the 380 pm Si substrate by 3.7-5.8 pm membranes and by other means.
I. Wilke
"Antenna-coupled thin-film nanometer metal-oxide-metal infrared diodes", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292R (14 December 1992); https://doi.org/10.1117/12.2298216
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I. Wilke, "Antenna-coupled thin-film nanometer metal-oxide-metal infrared diodes," Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292R (14 December 1992); https://doi.org/10.1117/12.2298216