Paper
20 October 1993 Low-background infrared hybrid focal plane array characterization
Lester J. Kozlowski, Scott A. Cabelli, Donald E. Cooper, Kadri Vural
Author Affiliations +
Abstract
Exploiting hybrid focal plane array methodology and a flexible multiplexing readout, 128 X 128 FPAs were made and directly compared using several short wavelength infrared (SWIR) and long wavelength (LWIR) detector technologies. The detector types include two GaAs/AlGaAs quantum well infrared photodetectors (QWIP), 1.7 micrometers InGaAs/InP, and 2.5 micrometers PV HgCdTe. The tests were performed at operating temperatures ranging from 35 K for the LWIR devices to as high as 175 K for the SWIR FPAs. Highlights include the first FPA demonstrations (to the best of our knowledge) of BLIP-limited detectivity (D*) for both LWIR GaAs/AlGaAs QWIP and 1.7 micrometers PV InGaAs/Inp. The 9 micrometers QWIP peak detectivity is near the theoretical background limit at 1.2 X 1010 photons/cm2-s background and 35 K operating temperature. The mean D* of 4.5 X 1013 Jones at 8.3 micrometers peak wavelength is 75% of BLIP. A maximum peak D* of 5.7 X 1014 Jones was achieved with the PV InGaAs/InP device at 200 K. This is also believed to be the highest reported FPA-level D* for a staring mosaic array operated at TV-type frame rate and integration time.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lester J. Kozlowski, Scott A. Cabelli, Donald E. Cooper, and Kadri Vural "Low-background infrared hybrid focal plane array characterization", Proc. SPIE 1946, Infrared Detectors and Instrumentation, (20 October 1993); https://doi.org/10.1117/12.158673
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Cited by 22 scholarly publications.
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KEYWORDS
Sensors

Staring arrays

Capacitance

Amplifiers

Infrared detectors

Quantum well infrared photodetectors

Field effect transistors

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