Paper
20 October 1993 Room-temperature InGaAs camera for NIR imaging
Marshall J. Cohen, Gregory H. Olsen
Author Affiliations +
Abstract
A room temperature camera based on a 128 X 128 pixel InGaAs focal plane array (FPA) is described. The photodiode array (PDA) was a backside-illuminated device with an In.53Ga.47As epitaxial active layer deposited on an InP substrate. The PDA was bump- bonded to a silicon CMOS readout multiplexer. The FPA was sensitive from below 0.9 micrometers (the cutoff of the substrate) to 1.7 micrometers (the bandgap of the active layer). At room temperature, the mean detectivity of the FPA, D*(lambda pk), exceeded 1013 cm-(root)Hz/W and increased to 3.5 X 1014 cm-(root)Hz/W when cooled to 230 K. Potential applications for this wavelength band are discussed.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marshall J. Cohen and Gregory H. Olsen "Room-temperature InGaAs camera for NIR imaging", Proc. SPIE 1946, Infrared Detectors and Instrumentation, (20 October 1993); https://doi.org/10.1117/12.158695
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Cited by 26 scholarly publications.
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KEYWORDS
Indium gallium arsenide

Staring arrays

Cameras

Photodiodes

Silicon

Gallium arsenide

Infrared detectors

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