Long-wavelength IR GaAs/GaAlAs detector array

Shmuel I. Borenstain; Naftali Paul Eisenberg

doi:10.1117/12.151092

13 August 1993 Long-wavelength IR GaAs/GaAlAs detector array

Shmuel I. Borenstain, Naftali Paul Eisenberg

Proceedings Volume 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine; (1993) https://doi.org/10.1117/12.151092
Event: 8th Meeting in Israel on Optical Engineering, 1992, Tel Aviv, Israel

Abstract

Utilization of 8 - 10 micrometers spectral band symmetrical, and 3 - 5 micrometers band asymmetrical GaAs/GaAlAs multiple quantum well (MQW) structure for a multiple color detector is discussed. A theoretical comparison between the predicted performance of a GaAs-MQW based focal plane array (FPA) operating in the 8 - 10 micrometers band, and state of the art narrow band gap (MCT, InSb) operating in the 3.2 - 4.2 micrometers band is given. We show that because operating in the 8 - 10 micrometers band even with 0.2 quantum efficiency the noise equivalent delta temperature is better than the theoretical limit at 3.2 - 4.2 micrometers IR FPA.

Citation Download Citation

Shmuel I. Borenstain and Naftali Paul Eisenberg "Long-wavelength IR GaAs/GaAlAs detector array", Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); https://doi.org/10.1117/12.151092

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