Computer Simulation Of Pulsed Laser And Electron Beam Annealing And Doping Of Semiconductors

R. J. Collins; W. T. Peria

doi:10.1117/12.958014

24 January 1980 Computer Simulation Of Pulsed Laser And Electron Beam Annealing And Doping Of Semiconductors

R. J. Collins, W. T. Peria

Proceedings Volume 0198, Laser Applications in Materials Processing; (1980) https://doi.org/10.1117/12.958014
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

A brief comparison of heating with pulsed electron bemas and lasers for the annealing of ion implanted semiconductors based on a computer simulation is given. The advantage of monoenergetic electrons is pointed out, and the use of such beam for distribution of impurities is suggested.

Citation Download Citation

R. J. Collins and W. T. Peria "Computer Simulation Of Pulsed Laser And Electron Beam Annealing And Doping Of Semiconductors", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958014

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