Characterization of electronic transport in amorphous silicon/crystalline silicon photodiodes

Heinz-Christoph Neitzert

doi:10.1117/12.162789

19 November 1993 Characterization of electronic transport in amorphous silicon/crystalline silicon photodiodes

Heinz-Christoph Neitzert

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162789
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

Heterodiodes have been fabricated by PECVD growth of a-Si:H layers on crystalline silicon substrates. These diodes exhibit interesting properties for applications as photodetectors and solar cells. The impact of an argon plasma exposure of the crystalline silicon before the deposition of the amorphous silicon has been studied by in-situ microwave detected transient photoconductivity measurements and compared to the breakdown characteristics and the photoresponse of these heterodiodes. It has been found that the argon plasma pretreatment leads to a high interface recombination rate and influences the reverse bias characteristics of charge carrier collection in the photodiodes. The built-in potential for samples undergoing argon plasma treatment before a-Si:H deposition is reduced by 130 meV compared to the untreated samples.

Citation Download Citation

Heinz-Christoph Neitzert "Characterization of electronic transport in amorphous silicon/crystalline silicon photodiodes", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162789

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