Bib photodetectors based on antimony doped silicon

G. Sirmain

doi:10.1117/12.2298449

30 August 1993 Bib photodetectors based on antimony doped silicon

G. Sirmain

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21040H (1993) https://doi.org/10.1117/12.2298449
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

Firstly conceived at Rockwell Science Center byPetroff and Stapelbroek in 1977 (Ref. 1), the BlockedImpurity Band photodetector (BIB) is now recognised toprovide significant improvements in comparison withconventional photoconductors. Because they areepitaxially grown, they are easily developed in arrayconfigurations having quite uniform pixel response. Theyare inherently radiation hard due to their small volume. Inaddition, they have better noise characteristics and theymay give some extension of the spectral response towardslonger wavelengths. This paper presents some results onBIB photodetectors based on antimony doped silicon,which gave a significant spectral responsivity in the30 pm wavelength region.

Citation Download Citation

G. Sirmain "Bib photodetectors based on antimony doped silicon", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21040H (30 August 1993); https://doi.org/10.1117/12.2298449

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