Radiation induced reduction of silicon loss tangent

A. Ibarra

doi:10.1117/12.2298528

30 August 1993 Radiation induced reduction of silicon loss tangent

A. Ibarra

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21042O (1993) https://doi.org/10.1117/12.2298528
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

It is known that the frequency behaviour of the silicon loss tangent shows a co-/ dependence,compared with the general tan (5Ã¢â‚¬â€ co behaviour for aluminum oxide and other oxides 1. For this reason,high purity, high resistivity silicon has been proposed to be used in dielectric windows for the high powerEC systems2. Loss tangent values as low as 10-3 and 10-4 have been measured at 15 and 145 GHzrespectively1,3. The main obstacle arises from its high sensitivity to ionizing radiation fields whichinduce large increases in the loss tangent due to radiation-induced electron-hole pairs1,4.

Citation Download Citation

A. Ibarra "Radiation induced reduction of silicon loss tangent", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21042O (30 August 1993); https://doi.org/10.1117/12.2298528

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available