Paper
10 December 1993 Temperature variation of optical bistability of a semiconductor
Bohdan M. Nitsovich, V. N. Vivcharyuk, I. M. Grigorashuk
Author Affiliations +
Proceedings Volume 2108, International Conference on Holography, Correlation Optics, and Recording Materials; (1993) https://doi.org/10.1117/12.165428
Event: Holography, Correlation Optics, and Recording Materials, 1993, Chernivsti, Ukraine
Abstract
The effect of the phonon subsystem of a crystal on laser absorption is considered. The exciton- phonon interaction is shown to result in a nonlinear behavior of absorption as a function of exciton gas density. The output light intensity is calculated as a function of temperature and the temperature range in which optical bistability occurs is established.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bohdan M. Nitsovich, V. N. Vivcharyuk, and I. M. Grigorashuk "Temperature variation of optical bistability of a semiconductor", Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); https://doi.org/10.1117/12.165428
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KEYWORDS
Excitons

Absorption

Crystals

Laser crystals

Bistability

Phonons

Semiconductors

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