Paper
31 October 1994 Laser-thermal diagnostics of multilayer opto- and microelectronic structures
Sergey V. Svechnikov, Leonid L. Fedorenko, E. B. Kaganovich, V. P. Plahkotny, S. V. Baranetz, V. A. Antonov
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191987
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
Magnitude and kinetics of laser induced integral flow of thermal radiation of semiconductors and metal-semiconductor structures are studied. The possibilities of latent defect disclosure in metal-semiconductor structures, near-surface macrodefects in semiconductor wafers, to control surface properties of a semiconductor and metal-semiconductor interface with the help of developing the laser-thermal method of diagnostics have been shown. It is shown also that measurements of integral flow of thermal radiation allow us to draw conclusions about the condition and mechanisms for laser-stimulated diffusion, defects creation, p-n junction, and ohmical contact formation processes in semiconductor structures.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey V. Svechnikov, Leonid L. Fedorenko, E. B. Kaganovich, V. P. Plahkotny, S. V. Baranetz, and V. A. Antonov "Laser-thermal diagnostics of multilayer opto- and microelectronic structures", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191987
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KEYWORDS
Semiconductors

Semiconductor lasers

Diagnostics

Metals

Platinum

Silicon

Diffusion

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