Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors

J. F. Dorsten; James E. Maslar; Ying Zhang; T. B. Rauchfuss; Paul W. Bohn; S. Agarwala; Ilesanmi Adesida; Catherine Caneau; Rajaram J. Bhat

doi:10.1117/12.180868

21 July 1994 Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors

J. F. Dorsten, James E. Maslar, Ying Zhang, T. B. Rauchfuss, Paul W. Bohn, S. Agarwala, Ilesanmi Adesida, Catherine Caneau, Rajaram J. Bhat

Author Affiliations +

Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180868
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The nature and disposition of surface states can have a dramatic effect on the near-surface electronic properties in semiconductor heterostructures. In particular the lack of a well-defined surface oxide in III-V materials means that surface band bending can cause surface recombination velocities to be up to 10³ larger than in Si-based materials. Raman scattering by coupled longitudinal optic phonons and 2D electron gas electrons in In_0.52Al_0.48AsIn_0.53Ga_0.47As (delta) -doped heterostructures is used to demonstrate the extreme sensitivity to surface states. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the L₊ mode being identified for the first time in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. In order to passivate native surface states organic thiols are being investigated. Measurements on bulk GaAs indicate a change in the surface depletion region thickness, within the abrupt junction model, of up to 50 angstrom (ca. 30%). Changes in carrier scattering times up to 50% have also been observed.

Citation Download Citation

J. F. Dorsten, James E. Maslar, Ying Zhang, T. B. Rauchfuss, Paul W. Bohn, S. Agarwala, Ilesanmi Adesida, Catherine Caneau, and Rajaram J. Bhat "Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180868

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available