Second harmonic generation in p-type GaAs quantum wells

Zhiwei Xu; Jury V. Vandyshev; Gary W. Wicks; Philippe M. Fauchet; Mike J. Shaw; Milan Jaros; Bruce A. Richman; Chris W. Rella; H. Alan Schwettman

doi:10.1117/12.175709

11 May 1994 Second harmonic generation in p-type GaAs quantum wells

Zhiwei Xu, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, H. Alan Schwettman

Author Affiliations +

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175709
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have performed second harmonic generation (SHG) measurements in the 3 - 5 micrometers region on p-type stepped quantum wells (QWs) using the tunable, high peak power pulses generated by a free electron laser. The samples were grown by MBE on (100) GaAs wafers. The asymmetric QWs are made of m monolayers of GaAs and n monolayers of Al_0.5Ga_0.5As sandwiched between AlAs barriers. The QWs were characterized by x-ray diffraction and room temperature photoluminescence (PL). We measured an order of magnitude enhancement of the second order susceptibility over bulk GaAs. In contrast to n-type QWs, the dominant component is the (Chi) _xyz⁽²) component. The results are explained by a full pseudopotential band structure calculation of (Chi) ⁽²).

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Zhiwei Xu, Jury V. Vandyshev, Gary W. Wicks, Philippe M. Fauchet, Mike J. Shaw, Milan Jaros, Bruce A. Richman, Chris W. Rella, and H. Alan Schwettman "Second harmonic generation in p-type GaAs quantum wells", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175709

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